SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1351
DESCRIPTION
·With TO-220C package
·Complement to type 2SB988
·Low collector saturation voltage
APPLICATIONS
·For general purpose application
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-50~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
60
60
7
3
0.5
2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=2A; I
B
=0.2A
I
C
=0.5A ; V
CE
=5V
V
CB
=60V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
E
=0; V
CB
=10V,f=1MHz
I
C
=0.5A ; V
CE
=5V
60
35
MIN
60
2SD1351
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
C
ob
f
T
TYP.
MAX
UNIT
V
0.25
0.7
1.0
1.0
0.1
0.1
300
V
V
mA
mA
pF
MHz
3.0
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=0.2A
V
CC
=30V;R
L
=15A
Duty cycleB1%
0.65
1.30
0.65
µs
µs
µs
h
FE
Classifications
O
60-120
Y
100-200
GR
150-300
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1351
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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