SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1559
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB1079
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
100
100
7
20
30
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
CONDITIONS
I
C
=25mA ,R
BE
==
I
C
=0.1mA ,I
E
=0
I
E
=50mA ,I
C
=0
I
C
=10A; I
B
=20mA
I
C
=20A; I
B
=200mA
I
C
=10A; I
B
=20mA
I
C
=20A; I
B
=200mA
V
CB
=100V; I
E
=0
V
CE
=80V; R
BE
==
I
C
=10A ; V
CE
=3V
1000
MIN
100
100
7
2SD1559
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat-1
V
CEsat -2
V
BE sat-1
V
BE sat-2
I
CBO
I
CEO
h
FE
TYP.
MAX
UNIT
V
V
V
2.0
3.0
2.5
3.5
100
1.0
20000
V
V
V
V
µA
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=10A; I
B1
=-I
B2
=20mA
1.0
9.0
3.0
µs
µs
µs
2
Microcontroller MCU
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