SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1135
·Low collector saturation voltage
·Wide safe operating area
APPLICATIONS
·For relay drivers,high-speed inverters,
converters,and other general high-current
switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD1668
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
MAX
60
50
6
7
12
2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=1mA ;R
BE
=9
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=4A; I
B
=0.4A
V
CB
=40V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=5A ; V
CE
=2V
I
C
=1A ; V
CE
=5V
70
30
MIN
50
60
6
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
2SD1668
TYP.
MAX
UNIT
V
V
V
0.4
100
100
280
V
µA
µA
10
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2.0A; I
B1
=-I
B2
=0.2A
V
CC
=20V;R
L
=10C
0.20
0.90
0.30
µs
µs
µs
h
FE-1
Classifications
Q
70-140
R
100-200
S
140-280
2
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