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SRAF830HC0G

Description
DIODE SCHOTTKY 30V 8A ITO220AC
CategoryDiscrete semiconductor    diode   
File Size224KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

SRAF830HC0G Overview

DIODE SCHOTTKY 30V 8A ITO220AC

SRAF830HC0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionITO-220AC, 3/2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS, UL RECOGNIZED
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage30 V
Maximum reverse current500 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
SRAF820 - SRAF8150
Taiwan Semiconductor
CREAT BY ART
8A, 20V - 150V Isolated Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Guard ring for over-voltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
1
2
MECHANICAL DATA
Case:
ITO-220AC
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.7 g (approximately)
ITO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 8A
T
J
=25°C
Maximum reverse current @ Rated V
R
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=100°C
T
J
=125°C
dV/dt
R
θJC
T
J
T
STG
- 55 to +125
- 55 to +150
I
R
15
-
10000
5
- 55 to +150
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
0.5
10
SRAF SRAF SRAF SRAF SRAF SRAF SRAF SRAF
820
20
14
20
830
30
21
30
840
40
28
40
850
50
35
50
8
150
0.70
0.85
0.1
-
5
V/μs
°C/W
°C
°C
mA
0.95
860
60
42
60
890
90
63
90
8100
100
70
100
8150
150
105
150
UNIT
V
V
V
A
A
V
Version: J1512

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