SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1691
DESCRIPTION
·With TO-126 package
·Complement to type 2SB1151
·Low saturation voltage
·High total power dissipation:P
T
=1.3W
·Large current capability and wide SOA
APPLICATIONS
·DC-DC converter
·Driver of solenoid or motor
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
T
a
=25
P
D
Total power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
60
7
5
8
1
1.3
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Turn-on time
Storage time
Fall time
I
C
=2A; I
B1
=-I
B2
=0.2A
R
L
=5.0?;V
CC
@10V
CONDITIONS
I
C
=2.0A ;I
B
=0.2A
I
C
=2.0A ;I
B
=0.2A
V
CB
=50V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.1A ; V
CE
=1V
I
C
=2A ; V
CE
=1V
I
C
=5A ; V
CE
=1V
60
100
50
0.2
1.1
0.2
MIN
2SD1691
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
t
on
t
stg
t
f
TYP.
MAX
0.3
1.2
10
10
UNIT
V
V
µA
µA
400
1.0
2.5
1.0
µs
µs
µs
h
FE-2
Classifications
M
100-200
L
160-320
K
200-400
2
京公网安备 11010802033920号
EEWORLD
