SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD953
DESCRIPTION
·With TO-3 package
·Built-in damper diode
·High voltage capability
APPLICATIONS
·Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open collector
VALUE
1500
5
5
7
95
130
-65~130
UNIT
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
E
=500m A;I
C
=0
I
C
=4.5 A;I
B
=2 A
I
C
=4.5 A;I
B
=2 A
V
CB
=750V;I
E
=0
I
CBO
Collector cut-off current
V
CB
=1500V;I
E
=0
h
FE-1
h
FE-2
V
F
t
f
t
s
DC current gain
DC current gain
Diode forward voltage
Fall time
I
C
=4A;I
B
end
=2A;L
B
=10µH
Storage time
I
C
=1A ; V
CE
=5V
I
C
=4A ; V
CE
=10V
I
F
=5A
8
3
MIN
5
2SD953
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
TYP.
MAX
UNIT
V
5.0
1.5
0.1
V
V
mA
1.0
1.6
0.8
13.5
V
µs
µs
2
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