Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD950
DESCRIPTION
·With
TO-3 package
·Built-in
damper diode
·High
voltage capability
APPLICATIONS
·Line-operated
horizontal deflection
output applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open collector
VALUE
1500
5
3
4.5
42
130
-65~130
UNIT
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
E
=500m A;I
C
=0
I
C
=2 A;I
B
=0.75 A
I
C
=2 A;I
B
=0.75 A
V
CB
=750V;I
E
=0
I
CBO
Collector cut-off current
V
CB
=1500V;I
E
=0
h
FE-1
h
FE-2
V
F
t
f
t
s
DC current gain
DC current gain
Diode forward voltage
Fall time
I
C
=2A;I
B
end
=0.75A;L
B
=10μH
Storage time
11
I
C
=1A ; V
CE
=5V
I
C
=2A ; V
CE
=10V
I
F
=4A
8
3
MIN
5
TYP.
2SD950
MAX
UNIT
V
5.0
1.5
50
1.0
V
V
μA
mA
1.7
0.9
V
μs
μs
2
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