SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Continuous collector current-I
C
=-1A
·Power dissipation -PD=35W @T
C
=25
·Complement to type 2N3583
APPLICATIONS
·High speed switching and linear amplifier
·
High-voltage operational amplifiers
·
Switching regulators ,converters
·
Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6420
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-250
-175
-6
-1.0
-5.0
-1.0
35
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
5.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=-50mA ; I
B
=0
I
C
=-1A; I
B
=-0.125A
I
C
=-1A ; V
CE
=-10V
V
CE
=-225V;V
BE(off)
=-1.5V
T
C
=150
V
CE
=-150V ;I
B
=0
V
EB
=-6V; I
C
=0
I
C
=-0.1A ; V
CE
=-10V
I
C
=-0.5A ; V
CE
=-10V
I
C
=-1A ; V
CE
=-10V
40
40
10
MIN
-175
2N6420
SYMBOL
V
CEO(SUS)
V
CEsat
V
BE
I
CEX
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
TYP.
MAX
UNIT
V
-5.0
-1.4
-1.0
-3.0
-10
-5.0
V
V
mA
mA
mA
200
2
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