SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·DARLINGTON
·High DC current gain
APPLICATIONS
·Power switching
·
Hammer drivers
·
Series and shunt regulators
·
Audio amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6530
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
80
5
8
15
0.25
65
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
9
JC
PARAMETER
Thermal resistance junction to case
VALUE
1.92
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N6530
SYMBOL
MAX
UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE-2
V
F
Collector-emitter sustaining voltage
I
C
=0.2A ; I
B
=0
I
C
=5A ;I
B
=10mA
I
C
=8A; I
B
=80mA
I
C
=5A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
V
CE
=80V; V
BE
=-1.5V
T
C
=125
V
CE
=80V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
I
F
=8A
80
V
Collector-emitter saturation voltage
2.0
V
Collector-emitter saturation voltage
3.0
V
Base -emitter on voltage
2.8
V
Base -emitter on voltage
4.5
0.5
5.0
1.0
V
Collector cut-off current
mA
Collector cut-off current
mA
Emitter cut-off current
5.0
mA
DC current gain
1000
10000
DC current gain
100
5000
Diode forward voltage
5.0
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6530
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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