SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1227
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Suitable for use in clocked
voltatge converters
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
MAXIMUN RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25?
Open emitter
Open base
Open collector
CONDITIONS
VALUE
300
200
7
10
3
100
150
-55~150
UNIT
V
V
V
A
A
W
?
?
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.25
UNIT
? /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=50mA ; I
B
=0
I
C
=0.1mA ; I
E
=0
I
E
=0.1mA ; I
C
=0
I
C
=5A; I
B
=0.5A
I
C
=5A; I
B
=0.5A
V
CB
=300V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=5V
50
MIN
200
300
7
2SC1227
TYP.
MAX
UNIT
V
V
V
1.0
1.5
20
20
V
V
µA
µA
2
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