SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1419
DESCRIPTION
·With TO-220 package
·Large collector power dissipation
APPLICATIONS
·For medium power amplifier applicattions
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
50
50
5
2
3
20
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified.
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=30mA ,I
B
=0
I
C
=1mA ,I
E
=0
I
E
=1mA ,I
C
=0
I
C
=1A; I
B
=0.1A
I
C
=1A; I
B
=0.1A
V
CB
=50V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
35
MIN
50
50
5
2SC1419
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
V
1.0
1.5
100
100
320
5
V
V
µA
µA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1419
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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