SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1448
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
:
V
CEO
=150V(min)
APPLICATIONS
·Power amplifier applications
·Vertical output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
150
150
5
1.5
0.5
1.5
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=30mA; I
B
=0
I
E
=1mA; I
C
=0
I
C
=0.5A; I
B
=50m A
V
CB
=150V;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=10V
I
C
=0.5A ; V
CE
=10V
40
5
MIN
150
5
2SC1448
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
1.5
20
20
140
V
µA
µA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1448
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
京公网安备 11010802033920号
EEWORLD
