SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1904
DESCRIPTION
·With TO-126 package
·Complement to type 2SA899
APPLICATIONS
·For high frequency power amplification
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
150
5
50mA
1
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=1mA; R
BE
=9
I
C
=10µA ;I
E
=0
I
E
=10µA ;I
C
=0
I
C
=10mA ;I
B
=1mA
I
C
=10mA ;I
B
=1mA
V
CB
=140V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=10mA ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=10mA ; V
CE
=5V
35
MIN
150
150
5
2SC1904
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
V
V
0.5
1.0
1
1
500
3
70
V
V
µA
µA
pF
MHz
2