SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2078
·Wit
DESCRIPTION
With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·27MHz RF power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
75
5
3
5
1.2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=1A; I
B
=0.1 A
I
C
=1A; I
B
=0.1 A
I
C
=0.1mA; I
E
=0
I
C
=1mA;R
BE
=150<
I
E
=0.1mA; I
C
=0
V
CB
=40V;I
E
=0
V
EB
=4V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.1A ; V
CE
=10V
100
25
45
80
75
5
MIN
2SC2078
SYMBOL
V
CEsat
V
BEsat
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
0.15
0.9
MAX
0.6
1.2
UNIT
V
V
V
V
V
10
10
200
µA
µA
pF
MHz
h
FE
Classifications
B
25-50
C
40-80
D
60-120
E
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2078
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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