SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2246
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Power switching
·
Power amplification
·
power driver
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
450
400
5
15
30
6
100
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.1A ; L=25mH
I
C
=6A; I
B
=1.2A
I
C
=6A ;I
B
=1.2A
V
CB
=450V; I
E
=0
T
C
=125
V
CE
=400V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=6A ; V
CE
=5V
10
MIN
400
2SC2246
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
TYP.
MAX
UNIT
V
1.2
1.5
1
4
5.0
1.0
V
V
mA
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=6A ;I
B1
=- I
B2
=1.2A
1.0
2.0
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2246
Fig.2 Outline dimensions
3
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