SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2331
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1008
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·
DC-DC converters
·
High frequency power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
T
a
=25
Total power dissipation
T
C
=25
Junction temperature
Storage temperature
15
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
7
2.0
4.0
1.0
1.5
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=1.0A ,I
B
=0.1A,L=1mH
I
C
=1A; I
B
=0.1A
I
C
=1A ;I
B
=0.1A
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
40
40
MIN
100
2SC2331
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
0.6
1.5
10
10
V
V
µA
µA
200
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1.0A I
B1
=- I
B2
=0.1A
R
L
=50A;V
CC
B50V
0.5
1.5
0.5
µs
µs
µs
h
FE-2
Classifications
M
40-80
L
60-120
K
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2331
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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