SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2336 2SC2336A 2SC2336B
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1006,
2SA1006A,2SA1006B
APPLICATIONS
·Audio frequency power amplifier
·
High frequency power amplifier
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2SC2336
V
CBO
Collector-base voltage
2SC2336A
2SC2336B
2SC2336
V
CEO
Collector-emitter voltage
2SC2336A
2SC2336B
V
EBO
I
C
I
CM
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
a
=25
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
180
200
250
180
200
250
5
1.5
3.0
1.5
W
25
150
-55~150
V
A
A
V
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
2SC2336 2SC2336A 2SC2336B
SYMBOL
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
CONDITIONS
I
C
=0.5A; I
B
=50mA
I
C
=0.5A ;I
B
=50mA
V
CB
=150V; I
E
=0
V
EB
=3V; I
C
=0
I
C
=5mA ; V
CE
=5V
I
C
=150mA ; V
CE
=5V
I
E
=0 ; V
CB
=10V,f=1MHz
I
C
=100mA ; V
CE
=10V
MIN
TYP.
MAX
1.0
1.5
1
1
UNIT
V
V
µA
µA
30
60
30
95
320
pF
MHz
h
FE-2
Classifications
R
60-120
Q
100-200
P
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2336 2SC2336A 2SC2336B
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2336 2SC2336A 2SC2336B
4
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2336 2SC2336A 2SC2336B
5
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