SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2429
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·High speed switching
·
Converters and inverters
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
MAX
450
400
7
15
20
5
150
175
-65~175
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=1A ; R
BE
=9
I
E
=1mA ; I
C
=0
I
C
=10A; I
B
=2A
I
C
=10A; I
B
=2A
V
CB
=450V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=10A ; V
CE
=5V
I
C
=2A ; V
CE
=10V,f=10MHz
I
E
=0 ; V
CB
=10V;f=1MHz
10
MIN
400
7
2SC2429
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
V
0.45
1.2
1.0
2.0
0.1
0.1
V
V
mA
mA
15
35
230
40
MHz
pF
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
V
CC
=150V,I
C
=10A
I
B1
=-I
B2
=2A
0.15
1.20
0.10
0.5
2.5
0.3
µs
µs
µs
2
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