SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2497 2SC2497A
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1096/A
·High collector to emitter voltage V
CEO
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SC2497
V
CEO
Collector- emitter voltage
2SC2497A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
Open collector
Open base
60
5
1.5
3
1.2*
P
D
Total power dissipation
T
C
=25
5*
T
j
T
stg
Junction temperature
Storage temperature
2
1
CONDITIONS
Open emitter
VALUE
UNIT
V
70
50
V
V
A
A
W
150
-55 +150
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SC2497
I
C
=2mA ; I
B
=0
2SC2497A
I
C
=1mA ;I
E
=0
I
C
=1.5A ;I
B
=0.15A
I
C
=1.5A ;I
B
=0.15A
V
CE
=10V; I
B
=0
V
CB
=20V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
E
=0 ; V
CB
=20V,f=1MHz
CONDITIONS
SYMBOL
2SC2497 2SC2497A
MIN
50
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
60
70
1.0
1.5
100
1
10
80
35
150
220
pF
MHz
V
V
V
µA
µA
µA
V
(BR)CBO
V
CEsat
V
BEsat
I
CEO
I
CBO
I
EBO
h
FE
C
OB
f
T
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
I
E
=0.5A ; V
CB
=5V,f=200MHz
h
FE
Classifications
R
80-160
S
120-220
2
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