SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2556 2SC2556A
DESCRIPTION
·With TO-126 package
·High V
CBO
·Low collector saturation voltage
·High transition frequency
APPLICATIONS
·Audio frequency output amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2SC2556
V
CBO
Collector-base voltage
2SC2556A
2SC2556
V
CEO
Collector- emitter voltage
2SC2556A
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
50
5
1
1.5
1.2
150
-55 +150
V
A
A
W
180
40
V
CONDITIONS
VALUE
130
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SC2556
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC2556A
2SC2556
V
(BR)CBO
Collector-base
breakdown voltage
2SC2556A
V
(BR)EBO
V
CEsat
I
CBO
h
FE-1
h
FE-2
C
OB
f
T
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
E
=10µA ;I
C
=0
I
C
=500mA ;I
B
=50mA
V
CB
=120V; I
E
=0
I
C
=1A ; V
CE
=0.5V
I
C
=0.5A ; V
CE
=2V
I
E
=0; V
CB
=20V;f=1MHz
I
C
=50mA ; V
CE
=10V
I
C
=10µA ;I
E
=0
I
C
=2mA ;I
B
=0
CONDITIONS
2SC2556 2SC2556A
SYMBOL
MIN
40
TYP.
MAX
UNIT
V
50
130
V
180
5
0.5
0.1
150
150
30
200
pF
MHz
350
V
V
µA
2
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