SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2562
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1012
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
50
5
5
1
25
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=10mA , I
B
=0
I
C
=3A; I
B
=0.15A
I
C
=3A; I
B
=0.15A
V
CB
=50V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=1V
I
C
=3A ; V
CE
=1V
I
C
=1A ; V
CE
=4V
f=1MHz ; V
CB
=10V
70
30
MIN
50
2SC2562
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE –1
h
FE -2
f
T
C
ob
TYP.
MAX
UNIT
V
0.4
1.2
1
1
240
V
V
µA
µA
120
80
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3A ;I
B1
=- I
B2
=0.15A
R
L
=10B,V
CC
=30V
0.1
1.0
0.1
µs
µs
µs
h
FE-1
Classifications
O
70-140
Y
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2562
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2562
4
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2562
5
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