Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1672
DESCRIPTION
·With
TO-3 package
·High
current capability
·Fast
switching speed
APPLICATIONS
·Motor
control
·Linear
and switching applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
·
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
150
120
6
25
30
120
175
-55~175
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.17
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.1A; I
B
=0
I
E
=1mA; I
C
=0
I
C
=10A;I
B
=1A
I
C
=20A;I
B
=2A
I
C
=20A;I
B
=2A
V
CB
=150V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=13A ; V
CE
=2V
I
C
=20A ; V
CE
=4V
20
10
MIN
120
6
2SC1672
TYP.
MAX
UNIT
V
V
0.6
1.2
2.0
0.1
0.1
100
V
V
V
mA
mA
2
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