SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2612
DESCRIPTION
·With TO-220 package
·High collector breakdown voltage
: V
CEO
=400V(Min)
APPLICATIONS
·
For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
3
6
1.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ,R
BE
=;,L=100mH
I
E
=10mA; I
C
=0
I
C
=1.5A; I
B
=0.3A
I
C
=1.5A; I
B
=0.3A
V
CB
=400V; I
E
=0
V
CE
=350V; R
BE
=;
I
C
=1.5A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
15
7
MIN
400
7
2SC2612
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
1.0
1.5
100
100
V
V
µA
µA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=3.0A I
B1
=- I
B2
=0.6A
V
CC
@150V
1.2
1.0
2.5
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2612
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2612
4
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