SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2682
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1142
APPLICATIONS
·Audio frequency power amplifier; high
frequency power amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
180
180
5
0.1
1.2
W
UNIT
V
V
V
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; I
B
=5mA
I
C
=50mA; I
B
=5mA
V
CB
=180V; I
E
=0
V
EB
=3V; I
C
=0
I
C
=1mA ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
I
C
=20mA ; V
CE
=10V
I
E
=0 ; V
CB
=10V;f=1MHz
90
100
MIN
2SC2682
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
TYP.
0.12
0.8
MAX
0.5
1.5
1
1
UNIT
V
V
µA
µA
190
200
200
3.2
320
MHz
pF
h
FE-2
Classifications
Q
100-200
P
160-320
2
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