SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3445
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
APPLICATIONS
·Designed for medium-switching
and amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
80
7
7.5
115
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N3445
SYMBOL
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=30mA ;I
B
=0
80
V
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
Collector-emitter saturation voltage
I
C
=3A; I
B
=0.3A
1.2
V
Collector-emitter saturation voltage
I
C
=7A;I
B
=1.5A
3.0
V
Base-emitter on voltage
I
C
=3A ; V
CE
=5V
1.5
V
Collector cut-off current
V
CE
=60V; I
B
=0
0.7
mA
I
CBO
Collector cut-off current
V
CB
=80V; I
E
=0
0.1
mA
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
0.1
mA
h
FE-1
DC current gain
I
C
=3A ; V
CE
=5V
20
60
h
FE-2
DC current gain
I
C
=7A ; V
CE
=5V
4
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N3445
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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