SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·High breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator and high voltage
·Switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC2792
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
850
800
7
2
4
1
80
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ,I
B
=0
I
C
=1mA ,I
E
=0
I
C
=500mA; I
B
=50mA
I
C
=500mA; I
B
=50mA
V
CB
=800V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.5A ; V
CE
=5V
10
MIN
800
850
2SC2792
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
1.0
1.5
100
1.0
V
V
µA
mA
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
V
CC
=400V; 2I
B1
=-I
B2
=0.1A;
R
L
=800>
1.0
4.0
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2792
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2792
4
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