SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2815
DESCRIPTION
·With TO-220C package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolut maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
300
250
6
5
40
150
-65~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=50mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=4A ;I
B
=0.4A
I
C
=4A ;I
B
=0.4A
V
CB
=300V; I
E
=0
V
EB
=6.0V; I
C
=0
I
C
=2.5A ; V
CE
=5V
40
MIN
250
300
6
2SC2815
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
1.0
1.2
0.1
0.1
V
V
mA
mA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2815
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
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