SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2827
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·400V/7A switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
450
6
6
50
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA ; I
B
=0
I
E
=1mA ; I
C
=0
I
C
=4A; I
B
=0.8A
I
C
=4A; I
B
=0.8A
V
CB
=500V ;I
E
=0
V
CE
=450V ; I
B
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V
10
MIN
450
6
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
CEO
I
EBO
h
FE-2
f
T
2SC2827
TYP.
MAX
UNIT
V
V
1.0
1.5
100
100
100
V
V
µA
µA
µA
20
MHz
2
Analog electronics
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