SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2834 2SC2834A
DESCRIPTION
·With TO-3PN package
·High speed switching
·High V
CBO
·Low collector saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
2SC2834
V
CBO
Collector-base voltage
2SC3834A
V
CEO
V
EBO
I
C
I
CM
I
B
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current (DC)
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
100
150
-55~150
Open base
Open collector
Open emitter
900
500
8
7
15
4
2.5
W
V
V
A
A
A
CONDITIONS
VALUE
800
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC2834
I
CBO
Collector
cut-off current
2SC3834A
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.2A ;L=25mH
I
C
=5A ;I
B
=1A
I
C
=5A ;I
B
=1A
V
CB
=800V; I
E
=0
2SC2834 2SC2834A
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
MIN
500
TYP.
MAX
UNIT
V
1.0
1.5
V
V
0.1
V
CB
=900V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V;f=1MHz
15
8
3.5
0.1
mA
mA
MHz
Switching times
2SC2834
t
on
Turn-on time
2SC2834A
t
s
Storage time
2SC2834
t
f
Fall time
2SC2834A
1.2
I
C
=5.0A; V
CC
=200V
I
B1
=1A ,I
B2
=-1A
1.2
2.5
1.0
µs
µs
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2834 2SC2834A
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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