SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2898
·
DESCRIPTION
·With TO-220C package
·High voltage,high speed
·High power switching
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
8
16
4
50
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A; L=100mH
I
E
=10mA ;I
C
=0
I
C
=4.0A; I
B
=0.8A(pulse test)
I
C
=4.0A; I
B
=0.8A(pulse test)
V
CB
=400V; I
E
=0
V
CE
=350V; R
BE
=>
I
C
=4A ; V
CE
=5V(pulse test)
I
C
=8A ; V
CE
=5V(pulse test)
15
7
MIN
400
7
2SC2898
SYMBOL
V
CEO(SUS)
V
(BR) EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
1.0
1.5
50
50
V
V
µA
µA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=8A, I
B1
=-I
B2
=1.6A
V
CC
@150V
µs
µs
µs
0.8
2.0
0.8
2
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