SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltatge
·High speed
APPLICATIONS
·For high voltatge ,high speed and power
switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
2SC2981
Fig.1 simplified outline (TO-3) and symbol
Collector
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
800
7
8
100
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=5mA ; R
BE
=7
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=2.5A; I
B
=0.5A
I
C
=2.5A; I
B
=0.5A
V
CB
=750V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.8A ; V
CE
=5V
I
C
=4A ; V
CE
=5V
15
10
MIN
800
900
7
2SC2981
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
V
1.0
1.5
0.1
0.1
V
V
mA
mA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2981
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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