SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Wide safe operating area
·High dissipation capability
APPLICATIONS
·Series and shunt regulators
·High fidelity amplifiers
·Power switching circuits
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6254
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
80
7
15
7
150
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=5A ;I
B
=0.5A
I
C
=15A ;I
B
=3A
I
C
=5A ; V
CE
=2V
V
CE
=60V; I
B
=0
V
CE
=100V; V
BE
=-1.5V
T
C
=150
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=2V
I
C
=15A ; V
CE
=4V
20
5
MIN
80
2N6254
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
0.5
4.0
1.5
1.0
0.5
5.0
0.5
70
V
V
V
mA
mA
mA
2
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