SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3047
DESCRIPTION
·With TO-220C package
·High voltage ,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
850
500
10
6
2
40
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
3.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=850V ;I
E
=0
V
EB
=10V; I
C
=0
I
C
=0.5 A ; V
CE
=5V
15
MIN
500
850
10
2SC3047
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
0.5
1.2
1
1
V
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1A; I
B1
=0.1A
I
B2
=-0.2A;R
L
=300A
1.0
3.0
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3047
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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