PolarP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR16P60P
V
DSS
I
D25
R
DS(on)
= - 600V
= - 10A
790mΩ
≤
Ω
ISOPLUS247
E153432
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
- 600
- 600
±20
±30
- 10
- 48
- 16
2.5
10
190
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
V~
N/lb.
g
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Avalanche Rated
Fast Intrinsic Rectifier
Low R
DS(ON)
and Q
G
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
G = Gate
S = Source
D
= Drain
G
D
Isolated
Tab
S
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
300
260
2500
20..120/4.5..27
5
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= -10V, I
D
= - 8A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ. Max.
- 600
- 2.0
- 4.0
V
V
±100
nA
- 25
μA
- 200
μA
790 mΩ
High-Side Switches
Push-Pull Amplifiers
DC Choppers
Automatic Test Equipment
Load-Switch Applications
Fuel Injection Systems
© 2013 IXYS CORPORATION, All Rights Reserved
DS99989B(01/13)
IXTR16P60P
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= - 8A, V
GS
= 0V, Note 1
I
F
= - 8A, -di/dt = -150A/μs
V
R
= -100V, V
GS
= 0V
440
7.4
- 33.6
Characteristic Values
Min.
Typ.
Max.
- 16
- 64
- 2.8
A
A
V
ns
μC
A
0.15
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= - 8A
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= - 8A
R
G
= 3Ω (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= - 8A, Note 1
Characteristic Values
Min.
Typ.
Max.
11
18
5120
445
60
29
25
60
38
92
27
23
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.66
°C/W
°C/W
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS247 (IXTR) Outline
Note
1:
Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTR16P60P
Fig. 1. Output Characteristics @ T
J
= 25ºC
-16
-14
-12
V
GS
= -10V
- 7V
-38
-34
-30
- 6V
-26
V
GS
= -10V
- 7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
-10
-8
-6
-4
-2
0
0
-1
-2
-3
-4
-5
-6
-7
I
D
- Amperes
-22
-18
-14
-10
- 6V
- 5V
-6
- 5V
-2
-8
-9
-10
-11
0
-5
-10
-15
-20
-25
-30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
-16
-14
-12
V
GS
= -10V
- 7V
2.0
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= - 8A Value vs.
Junction Temperature
V
GS
= -10V
R
DS(on)
- Normalized
I
D
- Amperes
-10
-8
-6
-4
-2
0
0
-5
-10
- 6V
I
D
= -16A
1.6
I
D
= - 8A
1.2
- 5V
0.8
0.4
-15
-20
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= - 8A Value vs.
Drain Current
2.2
V
GS
= -10V
-11
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.0
1.8
T
J
= 125ºC
-9
R
DS(on)
- Normalized
1.6
1.4
I
D
- Amperes
T
J
= 25ºC
0
-5
-10
-15
-20
-25
-30
-35
-7
-5
1.2
1.0
-3
-1
0.8
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXTR16P60P
Fig. 7. Input Admittance
-20
-18
-16
24
-14
25ºC
32
T
J
= - 40ºC
28
Fig. 8. Transconductance
I
D
- Amperes
-12
-10
-8
-6
T
J
= 125ºC
25ºC
- 40ºC
g
f s
- Siemens
20
125ºC
16
12
8
-4
-2
0
-3.5
4
0
-4.0
-4.5
-5.0
-5.5
-6.0
0
-5
-10
-15
-20
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-50
-45
-40
-35
-10
-9
-8
-7
V
DS
= - 300V
I
D
= - 8A
I
G
= -1mA
Fig. 10. Gate Charge
I
S
- Amperes
-25
-20
-15
-10
-5
0
-0.5
T
J
= 125ºC
T
J
= 25ºC
V
GS
- Volts
-2.5
-3.0
-3.5
-30
-6
-5
-4
-3
-2
-1
0
-1.0
-1.5
-2.0
0
10
20
30
40
50
60
70
80
90
100
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
- 100
Fig. 12. Forward-Bias Safe Operating Area
Ciss
R
DS(on)
Limit
100µs
Capacitance - PicoFarads
1,000
- 10
Coss
100
I
D
- Amperes
1ms
-1
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
- 0.1
DC, 100ms, 10ms
Crss
f
= 1 MHz
10
0
-5
-10
-15
-20
-25
-30
-35
-40
-10
- 100
- 1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTR16P60P
Fig. 13. Maximum Transient Thermal Impedance
1
Z
(th)JC
- ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_16P60P (B7) 6-03-08
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