SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3264
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1295
APPLICATIONS
·Audio and general purpose applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
230
230
5
17
5
200
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=25mA ; I
B
=0
I
C
=5A; I
B
=0.5A
V
CB
=230V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=4V
I
E
=0 ; V
CB
=10V;f=1MHz
I
E
=-2A ; V
CE
=12V
50
MIN
230
2SC3264
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
TYP.
MAX
UNIT
V
2.0
100
100
140
250
60
V
µA
µA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A;R
L
=12@
I
B1
=- I
B2
=0.5A
V
CC
=60V
0.30
2.40
0.50
µs
µs
µs
h
FE
classifications
O
50-100
Y
70-140
2
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