TrenchP
TM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA24P085T
IXTP24P085T
V
DSS
I
D25
R
DS(on)
=
=
≤
- 85V
- 24A
65mΩ
Ω
TO-263 AA (IXTA)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
- 85
- 85
±15
±25
- 24
- 80
- 24
200
83
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
G
DS
S
D (Tab)
TO-220AB (IXTP)
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-220
TO-263
300
260
1.13/10
3.0
2.5
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±15V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
- 85
- 2.5
- 4.5
V
V
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
±50
nA
- 3
μA
-100
μA
65 mΩ
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
DS99969B(01/13)
IXTA24P085T
IXTP24P085T
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
0.50
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 10Ω (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
10
16
2090
243
117
18
26
53
26
41
17
11
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.5
°C/W
°C/W
Pins:
1 - Gate
2,4 - Drain
3 - Source
TO-263 Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= - 24A, V
GS
= 0V, Note 1
I
F
= -12A, -di/dt = -100A/μs
V
R
= - 43V, V
GS
= 0V
40
72
- 3.6
Characteristic Values
Min.
Typ.
Max.
- 24
- 96
-1.5
A
A
V
ns
nC
A
TO-220 Outline
Note
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
Pins:
1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA24P085T
IXTP24P085T
Fig. 1. Output Characteristics @ T
J
= 25ºC
-24
V
GS
= -10V
- 9V
- 8V
-100
-90
-80
- 7V
-70
V
GS
= -10V
- 9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-20
I
D
- Amperes
I
D
- Amperes
-16
- 8V
- 7V
-60
-50
-40
-30
-20
- 6V
-12
- 6V
-8
-4
- 5V
-10
0
- 5V
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
-24
V
GS
= -10V
- 9V
- 8V
1.8
Fig. 4. R
DS(on)
Normalized to I
D
= -12A Value vs.
Junction Temperature
V
GS
= -10V
I
D
= - 24A
1.4
I
D
= -12A
-20
1.6
I
D
- Amperes
-16
- 7V
- 6V
R
DS(on)
- Normalized
-12
1.2
-8
- 5V
-4
1.0
0.8
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-2.2
-2.4
0.6
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= -12A Value vs.
Drain Current
2.6
2.4
2.2
V
GS
= -10V
-28
-24
T
J
= 125ºC
-20
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
-12
-24
-36
-48
-60
-72
-84
T
J
= 25ºC
-16
-12
-8
-4
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA24P085T
IXTP24P085T
Fig. 7. Input Admittance
-36
-32
-28
-24
20
T
J
= 125ºC
25ºC
- 40ºC
25ºC
16
12
8
-8
-4
0
-3.0
4
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
0
-4
-8
-12
-16
-20
-24
-28
-32
-36
-40
125ºC
28
24
T
J
= - 40ºC
Fig. 8. Transconductance
I
D
- Amperes
-20
-16
-12
V
GS
- Volts
g
f s
- Siemens
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-70
-60
-50
-10
-9
-8
-7
V
DS
= - 43V
I
D
= -12A
I
G
= -1mA
Fig. 10. Gate Charge
I
S
- Amperes
-40
-30
-20
-10
0
-0.4
V
GS
- Volts
T
J
= 25ºC
-6
-5
-4
-3
-2
-1
0
T
J
= 125ºC
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.4
0
5
10
15
20
25
30
35
40
45
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
- 100
Fig. 12. Forward-Bias Safe Operating Area
100µs
R
DS(on)
Limit
10ms
100ms
1ms
25µs
f
= 1 MHz
Capacitance - PicoFarads
Ciss
I
D
- Amperes
Coss
Crss
1,000
- 10
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
-30
-35
-40
-1
-1
- 10
- 100
100
0
-5
-10
-15
-20
-25
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA24P085T
IXTP24P085T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
30
29
28
R
G
= 10Ω, V
GS
= -10V
V
DS
= - 43V
29
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
28
T
J
= 125ºC
t
r
- Nanoseconds
t
r
- Nanoseconds
27
26
25
24
27
R
G
= 10Ω, V
GS
= -10V
V
DS
= - 43V
I
D
= -12A
26
T
J
= 25ºC
25
I
23
22
25
35
45
55
65
D
= - 24A
24
23
75
85
95
105
115
125
-12
-13
-14
-15
-16
-17
-18
-19
-20
-21
-22
-23
-24
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
120
26
29
28
27
26
25
24
23
22
25
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
58
t
r
100
V
DS
= - 43V
t
d(on)
- - - -
24
t
f
V
DS
= - 43V
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
R
G
= 10Ω, V
GS
= -10V
54
50
46
42
38
34
30
125
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
80
I
D
= - 24A, -12A
60
22
t
f
- Nanoseconds
20
I
D
= -12A
40
18
I
D
= - 24A
20
16
0
10
12
14
16
18
20
22
24
26
28
30
32
34
14
35
45
55
65
75
85
95
105
115
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
30
29
28
58
100
90
80
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
110
54
50
46
42
38
t
f
V
DS
= - 43V
t
d(off)
- - - -
t
f
V
DS
= - 43V
t
d(off)
- - - -
100
90
R
G
= 10Ω, V
GS
= - 10V
T
J
= 125ºC, V
GS
= -10V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
27
26
25
24
23
22
-12
-13
-14
-15
-16
-17
-18
-19
-20
-21
-22
-23
-24
T
J
= 125ºC, 25ºC
70
60
50
40
30
20
10
10
12
14
16
18
20
22
24
26
28
30
32
34
I
D
= -12A, - 24A
80
70
60
50
40
30
20
34
30
26
I
D
- Amperes
R
G
- Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
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