SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3310
DESCRIPTION
·With TO-220Fa package
·High collector breakdown voltage
·Excellent Switching times
APPLICATIONS
·Switching regulator
·High speed DC-DC converter
·High voltage switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
5
7
1
2
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3310
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=1mA ;I
E
=0
I
C
=10mA ;I
B
=0
I
C
=5A ;I
B
=1A
I
C
=5A ;I
B
=1A
V
CB
=400V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
12
8
MIN
500
400
1.0
1.5
100
1
TYP.
MAX
UNIT
V
V
V
V
µA
mA
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
T
r
t
s
t
f
Rise time
Storage time
Fall time
I
C
=4A ;I
B1
=-I
B2
=0.4A
V
CC
<200V;R
L
=10>
1.0
2.5
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3310
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3310
4
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3310
5