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MAT-03FH

Description
TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size573KB,12 Pages
ManufacturerADI
Websitehttps://www.analog.com
Download Datasheet Parametric Compare View All

MAT-03FH Overview

TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal

MAT-03FH Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-MBCY-W6
Reach Compliance Codecompliant
Other featuresLOW NOISE
Maximum collector current (IC)0.02 A
Collector-emitter maximum voltage36 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-78
JESD-30 codeO-MBCY-W6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
VCEsat-Max0.1 V
Base Number Matches1
a
FEATURES
Dual Matched PNP Transistor
Low Offset Voltage: 100 V Max
Low Noise: 1 nV/√Hz @ 1 kHz Max
High Gain: 100 Min
High Gain Bandwidth: 190 MHz Typ
Tight Gain Matching: 3% Max
Excellent Logarithmic Conformance: r
BE
Low Noise, Matched
Dual PNP Transistor
MAT03
PIN CONNECTION
TO-78
(H Suffix)
0.3
typ
GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent
parametric matching and high frequency performance. Low
noise characteristics (1 nV/
Hz
max @ 1 kHz), high bandwidth
(190 MHz typical), and low offset voltage (100
µV
max), makes
the MAT03 an excellent choice for demanding preamplifier appli-
cations. Tight current gain matching (3% max mismatch) and
high current gain (100 min), over a wide range of collector cur-
rent, makes the MAT03 an excellent choice for current mirrors.
A low value of bulk resistance (typically 0.3
Ω)
also makes the
MAT03 an ideal component for applications requiring accurate
logarithmic conformance.
Each transistor is individually tested to data sheet specifications.
Device performance is guaranteed at 25°C and over the extended
industrial and military temperature ranges. To ensure the long-
term stability of the matching parameters, internal protection
diodes across the base-emitter junction clamp any reverse base-
emitter junction potential. This prevents a base-emitter breakdown
condition that can result in degradation of gain and matching
performance due to excessive breakdown current.
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002

MAT-03FH Related Products

MAT-03FH MAT-03EH
Description TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
package instruction CYLINDRICAL, O-MBCY-W6 CYLINDRICAL, O-MBCY-W6
Reach Compliance Code compliant compliant
Other features LOW NOISE LOW NOISE
Maximum collector current (IC) 0.02 A 0.02 A
Collector-emitter maximum voltage 36 V 36 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 80 100
JEDEC-95 code TO-78 TO-78
JESD-30 code O-MBCY-W6 O-MBCY-W6
JESD-609 code e0 e0
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
VCEsat-Max 0.1 V 0.1 V
Base Number Matches 1 1
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