TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Parts packaging code | DIP |
| package instruction | CERDIP-14 |
| Contacts | 14 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.03 A |
| Collector-emitter maximum voltage | 40 V |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Minimum DC current gain (hFE) | 400 |
| JESD-30 code | R-GDIP-T14 |
| JESD-609 code | e0 |
| Number of components | 4 |
| Number of terminals | 14 |
| Maximum operating temperature | 125 °C |
| Package body material | CERAMIC, GLASS-SEALED |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 300 MHz |
| VCEsat-Max | 0.06 V |
| Base Number Matches | 1 |
| MAT04AY | MAT04BY | MAT04FS-REEL | MAT04FPZ | MAT04FSZ-REEL | MAT04FSZ | |
|---|---|---|---|---|---|---|
| Description | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SO-14, BIP General Purpose Small Signal | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, DIP-14, BIP General Purpose Small Signal | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SO-14, BIP General Purpose Small Signal | TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SO-14, BIP General Purpose Small Signal |
| Is it Rohs certified? | incompatible | incompatible | incompatible | conform to | conform to | conform to |
| package instruction | CERDIP-14 | CERDIP-14 | SO-14 | PLASTIC, DIP-14 | SO-14 | SO-14 |
| Reach Compliance Code | not_compliant | compliant | not_compliant | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| Maximum collector current (IC) | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| Collector-emitter maximum voltage | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Minimum DC current gain (hFE) | 400 | 300 | 300 | 300 | 300 | 300 |
| JESD-30 code | R-GDIP-T14 | R-GDIP-T14 | R-PDSO-G14 | R-PDIP-T14 | R-PDSO-G14 | R-PDSO-G14 |
| JESD-609 code | e0 | e0 | e0 | e3 | e3 | e3 |
| Number of components | 4 | 4 | 4 | 4 | 4 | 4 |
| Number of terminals | 14 | 14 | 14 | 14 | 14 | 14 |
| Maximum operating temperature | 125 °C | 125 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | 240 | NOT APPLICABLE | 260 | 260 |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | YES | NO | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn85Pb15) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | 30 | NOT APPLICABLE | 40 | 40 |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 300 MHz | 300 MHz | 300 MHz | 300 MHz | 300 MHz | 300 MHz |
| VCEsat-Max | 0.06 V | 0.06 V | 0.06 V | 0.06 V | 0.06 V | 0.06 V |
| Contacts | 14 | - | 14 | 14 | 14 | 14 |
| Maker | - | ADI | - | ADI | ADI | ADI |