SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3409
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
800
10
2
80
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=5mA ;R
BE
=7
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=1.5A ;I
B
=0.3A
I
C
=1.5A;I
B
=0.3A
V
CB
=800V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=4V
15
MIN
800
900
10
2SC3409
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
5.0
1.5
10
10
V
V
µA
µA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3409
Fig.2 outline dimensions
3
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