SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3447
DESCRIPTION
·With TO-220C package
·High breakdown voltage and high reliability
·Fast switching speed.
·Wide ASO (Safe Operating Area)
APPLICATIONS
·500V/5A switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
500
7
5
10
2
50
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=5mA ; R
BE
=:
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=3A; I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=500V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.6A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.6A ; V
CE
=10V
I
E
=0;f=1MHz ; V
CB
=10V
15
8
MIN
500
800
7
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
2SC3447
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
µA
µA
18
80
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
V
CC
=200V; I
C
=4A
I
B1
=0.8A;I
B2
=-1.6A;
R
L
=50B
0.5
3.0
0.3
µs
µs
µs
h
FE-1
classifications
L
15-30
M
20-40
N
30-50
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3447
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3447
4
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