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IXTH120P065T

Description
Power Field-Effect Transistor, 120A I(D), 65V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size192KB,6 Pages
ManufacturerIXYS
Environmental Compliance  
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IXTH120P065T Overview

Power Field-Effect Transistor, 120A I(D), 65V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

IXTH120P065T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1000 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage65 V
Maximum drain current (Abs) (ID)0.12 A
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)298 W
Maximum pulsed drain current (IDM)360 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
TrenchP
TM
Power MOSFETs
IXTA120P065T
IXTP120P065T
IXTH120P065T
V
DSS
I
D25
R
DS(on)
=
=
- 65V
- 120A
10mΩ
Ω
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
- 65
- 65
±15
±25
- 120
- 360
- 60
1
298
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
TO-220AB (IXTP)
G
DS
D (Tab)
TO-247 (IXTH)
G
D
S
D (Tab)
G = Gate
S = Source
Features
D
= Drain
Tab = Drain
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
1.13/10
2.5
3.0
6.0
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±
15V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
- 65
- 2.0
- 4.0
V
V
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
±100
nA
- 10
μA
- 750
μA
10 mΩ
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
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