SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3694
DESCRIPTION
·With TO-220Fa package
·Large current ,high speed
·Low saturation voltage
APPLICATIONS
·For use in drivers such as DC-DC
converters and actuators.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25
P
T
Total power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
100
60
7
15
30
7.5
2
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3694
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Collector capacitance
Transition frequency
CONDITIONS
I
C
=8A; I
B
=0.8A;L=1mH
I
C
=8A ; I
B
=0.4A
I
C
=12A ; I
B
=0.6A
I
C
=8A ; I
B
=0.4A
I
C
=12A ; I
B
=0.6A
V
CB
=60V;I
E
=0
V
CB
=60V;R
BE
=50?;Ta=125°C
V
CB
=60V; V
BE
=-1.5V
V
CB
=60V; V
BE
=-1.5V;Ta=125°C
V
EB
=5V;I
C
=0
I
C
=1.5A ; V
CE
=2V
I
C
=3.0A ; V
CE
=2V
I
C
=8.0A ; V
CE
=2V
V
CB
=10V;I
E
=0;f=1.0MHz
I
C
=1.5A ; V
CE
=10V
100
100
60
180
120
pF
MHz
400
MIN
60
0.3
0.5
1.2
1.5
10
1.0
10
1.0
10
TYP.
MAX
UNIT
V
V
V
V
V
µA
mA
µA
mA
µA
SYMBOL
V
CEO(SUS)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE-1
h
FE-2
h
FE-3
Cob
f
T
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=8.0A; I
B1
=-I
B2
=0.4A
V
CC
=50V ,R
L
=6.3?
0.3
1.5
0.3
µs
µs
µs
h
FE-2
Classifications
M
100-120
L
150-300
K
200-400
2
stm32/stm8
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