SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Low saturation voltage
.
·Excellent dependence of h
FE
on current.
·Fast switching speed.
APPLICATIONS
·Car-use inductance drivers, lamp drivers.
·Inverters drivers, conveters (strobes,
flashes, FLT lighting circuits).
·Power amplifiers
·High-speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3748
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
60
5
10
12
2
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3748
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=1mA; I
E
=0
I
C
=1mA; R
BE
=;
I
E
=1mA; I
C
=0
I
C
=5A; I
B
=0.25A
V
CB
=40V ;I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=1A ; V
CE
=5V
70
100
MIN
80
60
5
0.4
100
100
280
MHz
TYP.
MAX
UNIT
V
V
V
V
µA
µA
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
V
CC
=20V; I
C
=5A
I
B1
=-I
B2
=0.25A
R
L
=4C
0.1
0.5
0.1
µs
µs
µs
h
FE
Classifications
Q
70-140
R
100-200
S
140-280
2
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