SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3762
DESCRIPTION
·With TO-3PML package
·High speed switching
·High current capability
APPLICATIONS
·For use in high speed and power
switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
MAX
150
100
6
15
65
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SC3762
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=25mA ;I
B
=0
100
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=1mA ;I
E
=0
150
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ;I
C
=0
6
V
V
CEsat
Collector-emitter saturation voltage
I
C
=10A ;I
B
=1A
0.6
V
V
BEsat
Base-emitter saturation voltage
I
C
=10A ;I
B
=1A
1.5
V
I
CBO
Collector cut-off current
V
CB
=100V ;I
E
=0
10
µA
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
10
µA
h
FE
DC current gain
I
C
=5A ; V
CE
=5V
30
120
2
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