SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
2SC3870
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
7
15
3
2
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3870
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=3A ;I
B
=0.6A
I
C
=3A ;I
B
=0.6A
V
CB
=500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
15
8
30
MHz
MIN
400
1.0
1.5
100
100
TYP.
MAX
UNIT
V
V
V
µA
µA
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3A ;I
B
=0.6A;I
B2
=-1.2A
V
CC
=150V
0.7
2.0
0..3
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3870
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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