SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High speed switching
·High V
CBO
·Wide area of safe operation
APPLICATIONS
·For high breakdown voltate ,high-speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
2SC3970 2SC3970A
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
2SC3970
Collector-base voltage
2SC3970A
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
T
C
=25
Collector power dissipation
T
a
=25
Junction temperature
Storage temperature
2
150
-55~150
Open base
Open collector
Open emitter
900
500
8
1.5
3.0
0.5
25
W
V
V
A
A
A
CONDITIONS
VALUE
800
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC3970
2SC3970A
CONDITIONS
I
C
=10mA , I
B
=0
I
C
=0.6A; I
B
=0.17A
I
C
=0.6A; I
B
=0.17A
V
CB
=800V; I
E
=0
2SC3970 2SC3970A
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
MIN
500
TYP.
MAX
UNIT
V
1.0
1.5
V
V
I
CBO
Collector
cut-off current
0.1
V
CB
=900V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.6A ; V
CE
=5V
I
C
=0.1A ; V
CE
=10V;f=1MHz
15
8
20
0.1
mA
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
mA
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=0.6A; I
B1
=0.17A
I
B2
=-0.34A;V
CC
=200V
1.0
3.0
0.3
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3970 2SC3970A
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3970 2SC3970A
4
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