SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1763
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage V
CEO
·Complement to type 2SB1186
·High transition frequency
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
120
5
2
3
20
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=1mA , I
B
=0
I
C
=50µA , I
E
=0
I
E
=50µA , I
C
=0
I
C
=1A ;I
B
=0.1A
I
C
=1A ;I
B
=0.1A
V
CB
=100V I
E
=0
V
EB
=4V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
E
=-0.1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V ,f=1MHz
100
MIN
120
120
5
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
ob
2SD1763
TYP.
MAX
UNIT
V
V
V
0.4
1.5
1
1
320
80
20
V
V
µA
µA
MHz
pF
h
FE
Classifications
E
100-200
F
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1763
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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