2SD1772A datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> 2SD1772A

2SD1772A: Description15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218; Categorysemiconductor Discrete semiconductor; File Size134KB，4 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

Download Datasheet Parametric Compare View All

2SD1772A Overview

15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218

2SD1772A Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	15 A
Maximum Collector-Emitter Voltage	400 V
Processing package description	TO-218, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	300

Preview

Download Datasheet

View All

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1772 2SD1772A

DESCRIPTION

·With TO-220Fa package

·Complement to type 2SB1192/1192A

·Large collector power dissipation

APPLICATIONS

·For power amplification

·For TV vertical deflection output

PINNING

DESCRIPTION

Base

Collector

Fig.1 simplified outline (TO-220Fa) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS AT Ta=25

SYMBOL

CBO

PARAMETER

Collector-base voltage

2SD1772

CEO

Collector-emitter voltage

2SD1772A

EBO

Emitter-base voltage

Collector current (DC)

Collector current-peak

=25

Collector power dissipation

=25

stg

Junction temperature

Storage temperature

150

-55~150

Open collector

Open base

180

CONDITIONS

Open emitter

VALUE

200

150

UNIT

2SD1772A Related Products

	2SD1772A	2SD1772	BU931P
Description	15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218	15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218	15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218
Number of terminals	3	3	3
Transistor polarity	NPN	NPN	NPN
Maximum collector current	15 A	15 A	15 A
Maximum Collector-Emitter Voltage	400 V	400 V	400 V
Processing package description	TO-218, 3 PIN	TO-218, 3 PIN	TO-218, 3 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	TIN	TIN	TIN
Terminal location	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of components	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	300	300	300

Recommended Resources

Car glass hail melting circuit b

20m band CW, QRP amateur radio

A method of saving electricity for electric welding machine

380V 50Hz 3A phase sequence fixed circuit

Phone monitor circuit diagram

555 pulse electrotherapy instrument circuit

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components