BU931P datasheet, PDF - EEWORLD Datasheet

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BU931P: Description15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218; Categorysemiconductor Discrete semiconductor; File Size134KB，4 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

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BU931P Overview

15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218

BU931P Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	15 A
Maximum Collector-Emitter Voltage	400 V
Processing package description	TO-218, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	300

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1772 2SD1772A

DESCRIPTION

·With TO-220Fa package

·Complement to type 2SB1192/1192A

·Large collector power dissipation

APPLICATIONS

·For power amplification

·For TV vertical deflection output

PINNING

DESCRIPTION

Base

Collector

Fig.1 simplified outline (TO-220Fa) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS AT Ta=25

SYMBOL

CBO

PARAMETER

Collector-base voltage

2SD1772

CEO

Collector-emitter voltage

2SD1772A

EBO

Emitter-base voltage

Collector current (DC)

Collector current-peak

=25

Collector power dissipation

=25

stg

Junction temperature

Storage temperature

150

-55~150

Open collector

Open base

180

CONDITIONS

Open emitter

VALUE

200

150

UNIT

BU931P Related Products

	BU931P	2SD1772A	2SD1772
Description	15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218	15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218	15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218
Number of terminals	3	3	3
Transistor polarity	NPN	NPN	NPN
Maximum collector current	15 A	15 A	15 A
Maximum Collector-Emitter Voltage	400 V	400 V	400 V
Processing package description	TO-218, 3 PIN	TO-218, 3 PIN	TO-218, 3 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	TIN	TIN	TIN
Terminal location	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of components	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	300	300	300

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